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| AUIRLR3105 hexfet ? power mosfet www.irf.com 1 pd - 97703a automotive grade features dynamic dv/dt rating ! "! # $ % $# ! #! &"' $ ( )% "! #" *# +, description !" # $ % & ' ' # !" ( ) ' & absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. s d g hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ gds gate drain source d-pak AUIRLR3105 parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r jc junction-to-case CCC 2.65 r ja junction-to-ambient (pcb mount) CCC 50 c/w r ja junction-to-ambient CCC 110 -55 to + 175 300 57 0.38 16 max. 2518 100 3.4 94 61 see fig. 12a, 12b, 15, 16 v (br)dss 55v r ds(on) typ. 30m max 37m i d 25a downloaded from: http:/// 2 www.irf.com s d g s d g repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 0.55mh, r g = 25 , i as = 15a, v gs =10v. i sd 25a, di/dt 290a/ s, v dd v (br)dss , t j 175c. pulse width 300 s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax ' see fig 12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. when mounted on 1" square pcb (fr-4 or g-10 material). forrecommended footprint and soldering techniques refer to application note #an-994. r is measured at t j of approximately 90c. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC 0.056 CCC v/c r ds(on) static drain-to-source on-resistance CCC 30 37 CCC 35 43 v gs(th) gate threshold voltage 1.0 CCC 3.0 v gfs forward transconductance 15 CCC CCC s i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 200 na gate-to-source reverse leakage CCC CCC -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC CCC 20 q gs gate-to-source charge CCC CCC 5.6 nc q gd gate-to-drain ("miller") charge CCC CCC 9.0 t d(on) turn-on delay time CCC 8.0 CCC t r rise time CCC 57 CCC t d(off) turn-off delay time CCC 25 CCC ns t f fall time CCC 37 CCC l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from package and center of die contact c iss input capacitance CCC 710 CCC c oss output capacitance CCC 150 CCC pf c rss reverse transfer capacitance CCC 28 CCC c oss output capacitance CCC 890 CCC c oss output capacitance CCC 110 CCC c oss eff. effective output capacitance CCC 210 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 25 (body diode) a i sm pulsed source current CCC CCC 100 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 52 78 ns q rr reverse recovery charge CCC 82 120 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) m v ds = 25v v gs = 5.0v, i d = 13a conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz v ds = 25v, i d = 15a i d = 15a v ds = 44v v gs = 16v v gs = -16v v gs = 5.0v, see fig. 6 & 13 v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c mosfet symbol v dd = 28v i d = 15a r g = 24 conditions r d = 5.0 , see fig. 18 v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 15a ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 44v t j = 25c, i f = 15a, v dd = 28v di/dt = 100a/ s t j = 25c, i s = 15a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 0v, v ds = 44v, ? = 1.0mhz downloaded from: http:/// www.irf.com 3 ? qualification standards can be found at international rectifiers web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage qualification information ? d-pak n/a qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5(+/- 2000v ) ??? (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m2(+/- 200v ) ??? (per aec-q101-002) human body model class h1a(+/- 500v ) ??? (per aec-q101-001) downloaded from: http:/// 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0. 1 1 10 100 v ds , drain-to-source voltage (v) 0. 01 0. 1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20 s pulse width tj = 25c vgs top 1 5v 10v 5.0v 3.0v 2.7v 2.5v 2.25v bottom 2.0v 0. 1 1 10 100 v ds , drain-to-source voltage (v) 0. 1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20 s pulse width tj = 175c vgs top 1 5v 10v 5.0v 3.0v 2.7v 2.5v 2.25v bottom 2.0v 2. 0 4. 0 6. 0 8. 0 v gs , gate-to-source voltage (v) 0. 01 0. 10 1. 00 10. 00 100. 00 1000. 00 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 20 s pulse width 0 1 02 03 04 0 i d, drain-to-source current (a) 0 5 10 15 20 25 30 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 25v 20 s pulse width fig 4. typical forward transconductance vs. drain current downloaded from: http:/// www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 0 1 02 03 04 0 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v vds= 28v vds= 11v i d = 15a for test circuit see figure 13 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd n ce downloaded from: http:/// 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 5 10 15 20 25 30 t , case temperature ( c) i , drain current (a) c d fig 10. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 25a downloaded from: http:/// www.irf.com 7 25 50 75 100 125 150 175 0 20 40 60 80 100 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 6.1a 11a 15a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - - . fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0. 0 0. 5 1. 0 1. 5 2. 0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a downloaded from: http:/// 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1. 0e-07 1. 0e-06 1. 0e-05 1. 0e-04 1.0e-03 1. 0e-02 1. 0e-01 tav (sec) 0. 1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bot tom 50% duty cycle i d = 15a downloaded from: http:/// www.irf.com 9 fig 17. / 0 # for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period , , + - + + + - - - ? ? ! "#"" ? $ % % ? "#""& # v ds 90%10% v gs t d(on) t r t d(off) t f '( 1 ) $ 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms downloaded from: http:/// 10 www.irf.com * + , -. /0 ' .11 &&1(1 d-pak part marking information 12 1 332 3 / 3/ 2 #"( $ 4#"5 6 downloaded from: http:/// www.irf.com 11 ! "# $ * + , tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch downloaded from: http:/// 12 www.irf.com ordering information base part number package type standard pack complete part number form quantity AUIRLR3105 dpak tube 75 AUIRLR3105 tape and reel 2000 AUIRLR3105tr tape and reel left 3000 AUIRLR3105trl tape and reel right 3000 AUIRLR3105trr downloaded from: http:/// www.irf.com 13 2 ( / 0 3 ' +/0, ( & ' 425 ) 1 $ & '6 /07 ( & /0 ' /07 & $ $ ) /0 & ) ' $ & /0 ' & 3 % ' /0 & # ( $ & 0 /0 /0 '( ' ' & 0 % ' & /0 ' ' & / ' '6 & 0 /0 ' ' /0 ) /0 ' & /0 ' ' & /0 # ' /0 6 & 8 /0 # 8 / 0 ' ' ) ' 6 # /0 & " ' * 9 +*9, 2 * * *9 $ ' & 8 ( /0 ' *9 % $ 8 7 ( ' $ & /0 /0 ' /0 /"1 :;<=< $ ' ' 425& 8 ( % /0 ' ' $ & $ #!! ( ! 67 !8009 +9"0 +0 ! " # !$ # %&' ()*+& &,- downloaded from: http:/// |
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